RF Transistors

Phoenix Semiconductor offer vertical DMOS devices from Point 9 Technology. These devices are capable of greater than 13dB gain at 1GHz.

With a self aligned metal gate MOSFET process utilizing gold metalisation for added rugedness and reliability at high power. We can offer the following advantages to the RF engineerin in high and medium power amplifier applications.

  • Power to 200 watts
  • Gain flatness over a very wide bandwidth
  • Frequency DC to 1.5GHz
  • High gain, greater than 10dB broadband
  • High VSWR capability

For package outline drawings please click here.

28V RF MOSFET

Part Number Freq
MHz 		Pout
W 		Gain
dB 		gfs
Mhos 		Ojc
C/W max		 Ciss
Pf 		Coss
pF 		Crss
pF 		Pkg Style
D1001 175 20 16 .8 3.5°C 60 30 2.5 DA Single ended
D1002 175 40 16 1.6 2°C 120 60 5 DA Single ended
D1003 175 60 16 1.8 1.5°C 180 75 7.5 DM Single ended
D1004 175 80 16 3.2 1°C 240 120 10 DT Single ended
D1005 175 80 16 3.2 1°C 240 120 10 DM Single ended
D1006 175 120 16 4.8 0.8°C 360 180 15 DV Single ended
D1017 175 150 13 4.8 0.8°C 360 180 15 DM Single ended
D1027 200 200 16 4.8 0.4°C 360 180 15 DR Push pull
D1015 400 125 13 3.2 0.5°C 240 120 10 DH Push pull
D1021 400 125 13 3.2 0.5°C 240 120 10 DK Push pull
D1020 400 150 10 4 0.45°C 300 125 12.5 DR Push pull
D1013 500 10 13 0.8 3.5°C 60 30 2.5 DP Single ended
D1007 500 20 13 0.8 1.75°C 60 30 2.5 DK Push pull
D1014 500 20 13 1.6 2°C 120 50 5 DP Single ended
D1016 500 20 13 0.8 1.75°C 60 30 2.5 DQ Push pull
D1008 500 40 13 1.6 1°C 120 60 5 DK Push pull
D2840 500 40 13 0.8 1.75°C 60 30 2 DQ Push pull
D2860 500 60 13 1.6 1°C 120 60 5 DK Push pull
D1019 500 75 13 3.2 1°C 240 120 10 DP Single ended
D1012 500 100 10 2.4 0.6°C 180 90 7.5 DH Push pull
D1018 500 100 10 2.4 0.7°C 180 90 7.5 DD Push pull
D1022 500 100 10 2.4 0.6°C 180 90 7.5 DK Push pull
D1010 500 150 10 3.2 0.45°C 240 100 10 DR Push pull
C204 800 120 10 3.6 0.52°C 250 100 7.5 DR Push pull
D2001 1000 2.5 13 0.18 10°C 12 6 0.5 DP Single ended
D2002 1000 5 13 0.36 6°C 24 12 1 DP Single ended
D2003 1000 5 13 0.18 5°C 12 6 0.5 DQ Push pull
D2005 1000 7.5 13 0.54 5°C 36 18 1.5 DP Single ended
D2004 1000 10 13 0.36 3°C 24 12 1 DK Push pull
D2007 1000 10 10 0.36 3°C 24 12 1 DQ Push pull
D2012 1000 10 13 0.72 4.2°C 48 24 2 DP Single ended
D2006 1000 15 13 0.54 2.5°C 36 18 1.5 DK Push pull
D2014 1000 15 13 1 2.5°C 60 24 2 DP Single ended
D2013 1000 20 13 .072 2.1°C 48 24 2 DK Push pull
D2015 1000 30 13 1 1.25°C 60 24 2 DK Push pull
C202 1000 40 10 1.5 1°C 96 40 4 DK Push pull
D2017 1000 40 10 1.2 1.1°C 72 30 3 DK Push pull
C201 1000 80 10 2.2 0.72°C 144 60 4.5 DH Push pull
C203 1000 100 10 2.9 0.6°C 200 80 6 DR Push pull

12V RF MOSFET

Part Number Freq
MHz 		Pout
W 		Gain
dB 		gfs
Mhos 		Ojc
C/W max 		Ciss
Pf 		Coss
pF 		Crss
pF 		Pkg Style
D1260 175 50 10 3.2 1°C 240 180 16 DT Single ended
D1201 500 10 10 0.8 3.5°C 60 40 3.5 DP Single ended
D1202 500 20 10 1.6 2°C 120 80 8 DP Single ended
D1207 500 20 10 0.8 1.75°C 60 40 3.5 DQ Push pull
D1208 500 40 10 1.6 1°C 120 80 7 DK Push pull
D2201 1000 2.5 10 0.18 10°C 12 10 1 DP Single ended
D2202 1000 5 10 0.36 6°C 24 20 2 DP Single ended
D2203 1000 5 10 0.18 5°C 12 10 2 DQ Push pull
D2212 1000 10 10 0.72 4.2°C 48 40 20 DP Single ended
D2213 1000 20 10 0.72 2.1°C 48 40 20 DK Push pull