New Products
Diodes
Radiation hardened assured4″ precision EPI wafer
Cat 1 Bonding - Die form
First products to be introduced
- 1N5811, 5809, 5807
- 1N5805, 5804, 5802
- Qualified JANS
- Engineering lot started
- Qualified JANS expected July 2010
MOSFET
First device to be 600V n-channel 11 Amp- Radiation hardness assured layout
- Qualification July 2010
- 100 through 400 volt
- TO257 and TO254
Bare die
Other voltages on requestFuture
- IGBT
- Silicon Carbide
